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| AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications). Features Features VDS (V) ==30V VDS (V) 30V IDD==11A (VGS ==10V) I 5.7A (VGS 10V) RDS(ON) < 26.5m (VGS = 10V) RDS(ON) < 14.5m (VGS = 10V) RDS(ON) <<32m (VGS ==4.5V) RDS(ON) 18m (VGS 4.5V) RDS(ON) < 48m (VGS = 2.5V) Rg,Ciss,Coss,Crss Tested TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25C TA=70C ID IDM PD TJ, TSTG Maximum 30 12 5.7 4.7 25 1.4 0.9 -55 to 150 Units V V A A W C Symbol t 10s Steady-State Steady-State RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3400A Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=30V, VGS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=5.7A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=5A VGS=2.5V, ID=3A gFS VSD IS Forward Transconductance VDS=5V, ID=5.7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.7 25 22 31 25.4 34 26 0.72 1.0 2.0 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88 65 0.95 10 VGS=4.5V, VDS=15V, ID=5.7A 1.8 3.75 3.2 VGS=10V, VDS=15V, RL=2.6, RGEN=3 IF=5.7A, dI/dt=100A/us 3.5 21.5 2.7 16.8 8 20 1.5 13 1100 26.5 38 32 48 S V A pF pF pF nC nC nC ns ns ns ns ns nC m 1 Min 30 1 5 100 1.5 Typ Max Units V uA nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5.7A, dI/dt=100A/us A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. 8.5 C. The RJA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. 0.0 D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. 40 A E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA #DIV/0! curve provides a single pulse rating. F: The current rating is based on the t 10s thermal resistance rating. Rev0: Apr. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3400A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 35 30 25 ID (A) 20 15 10 5 0 0 1 2 VGS=2V 2.5V ID(A) 10V 4.5V 3V 20 VDS=5V 16 12 0.7 8 125C VGS=10V, ID=8.5A VGS=4.5V, ID=8.5A 5 25 1 1 uA 5 100 nA 1.5 25C 24 36.0 29.0 4 20 30.0 23 34.5 0 0.5 1 VGS=2.5V, ID=5A VDS=5V, ID=11A 3 4 0 45 2 2.5 VDS (Volts) Maximum 1: On-Region CharacteristicsCurrent Figure Body-Diode Continuous 60 50 RDS(ON) (m) 45 40 35 30 25 20 15 0 5 VGS=4.5V Normalized On-Resistance 55 1.8 VGS(Volts) 4.5 Figure 2: Transfer Characteristics 26 1.5 0.72 1 3 1.5 900 1100 88 65 ID=5A 0.95=4.5V 1.5 VGS 10 1.8 3.75 3.2 3.5 21.5 2.7 50 75 16.8 VGS=10V ID=5.7A Qg VGS=2.5V VGS=10V, VDS=15V, ID=8.5A 1.2 VGS=10V, VDS=15V, RL=1.8, RGEN=3 0.9 VGS=10V 10 0.6 15 20 -50 -25 0 25 ID (A) IF=8.5A, dI/dt=100A/s Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 ID=5.7A 50 RDS(ON) (m) 40 IF=8.5A, dI/dt=100A/s 100 125 150 175 Temperature (C) 8 Figure 4: On-Resistance vs. Junction Temperature 8.5 1.0E+01 #DIV/0! IS (A) 125C 1.0E+00 40 1.0E-01 1.0E-02 0.0 125C A 1.0E-03 30 25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-04 COMPONENTS IN LIFE SUPPORT DEVICES25CSYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OR 20 1.0E-05 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 0 2 4 6 8 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3400A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 VDS=15V ID=5.7A Capacitance (pF) 1500 1200 Ciss 900 0.7 600 300 0 0 5 VGS=10V, ID=8.5A 1 25 1 20 30 23 Coss 34.5 26 10 15 VDS0.72 (Volts) 900 88 65 0.95 1 uA 5 100 nA 1.5 24 36 29 45 20 25 30 VGS=4.5V, ID=8.5A 0 0 2 4 6 Crss VGS=2.5V, ID=5A VDS8 =5V, ID10 =11A 12 Qg (nC) Figure 7: Gate-Charge Characteristics Maximum Body-Diode Continuous Current 100.00 RDS(ON) limited 10s 30 Power (W) 100s 1ms 1 Figure 8: Capacitance Characteristics 4.5 1100 TJ(Max)=150C 1.5 TA=25C 40 10.00 ID (Amps) Qg 1.00 VGS=10V, VDS=15V, ID=8.5A 20 10ms 0.10 TJ(Max)=150C TA=25C 0.1 VGS=10V, VDS=15V, RL=1.8, RGEN=3 DC 100ms 10 10s 0 0.001 0.01 0.01 1 10 100 IF=8.5A, dI/dt=100A/s VDS (Volts) 0.01 F Figure 9: Maximum Forward Biased Safe Operating Area (Note E) I =8.5A, dI/dt=100A/s Figure 10: Single Pulse8 Power Rating Junction-toAmbient (Note E) 10 1.8 3.75 3.2 3.5 21.5 2.7 0.1 1 16.8 (s) Pulse Width 10 100 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=125C/W 8.5 0.0 In descending order 40 A D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse #DIV/0! 1 PD THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 0.1 Ton OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Single Pulse T FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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